Solid source sublimator

ABSTRACT

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.16/539,911, filed Aug. 13, 2019, titled SOLID SOURCE SUBLIMATOR, whichclaims the benefit of priority to U.S. Provisional Application No.62/719,027, filed Aug. 16, 2018, titled SOLID SOURCE SUBLIMATOR, each ofwhich is hereby incorporated by reference herein in its entirety.

BACKGROUND

A typical solid or liquid source reactant delivery system includes asolid or liquid source vessel and a heating means. The vessel caninclude a chemical reactant that is to be vaporized. A carrier gassweeps reactant vapor along with it through a vessel outlet andultimately to a substrate reaction chamber. Ordinarily, one isolationvalve is provided upstream of the vessel inlet, and another isolationvalve is provided downstream of the vessel outlet.

Field

The present application relates generally to systems and methodsinvolving semiconductor processing equipment, and specifically tovaporizing systems for chemical vapor delivery.

SUMMARY

Some embodiments of a solid source chemical sublimator can include ahousing configured to hold solid chemical reactant therein. The housingcan comprise a proximal portion and a distal portion, and can have ahousing axis extending along a length of the housing. A lid may bedisposed on a proximal portion of the housing. The lid can include afluid inlet and a fluid outlet and define a serpentine flow path withina distal portion of the lid. The lid can be adapted to allow gas flowwithin the flow path. The solid source chemical sublimator can include afilter that is disposed between the serpentine flow path and the distalportion of the housing. The filter can have a porosity configured torestrict a passage of a solid chemical reactant therethrough.

Details of one or more implementations of the subject matter describedin this specification are set forth in the accompanying drawings and thedescription below. Other features, aspects, and advantages will becomeapparent from the description, the drawings, and the claims. Neitherthis summary nor the following detailed description purports to defineor limit the scope of the inventive subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other aspects of the disclosure will be readily apparent tothe skilled artisan in view of the description below, the appendedclaims, and from the drawings, which are intended to illustrate and notto limit the invention, and wherein:

FIG. 1 shows a solid source chemical sublimator that can be used as achemical vaporizer in some embodiments.

FIG. 2 shows another example solid source chemical sublimator of someembodiments.

FIG. 3A shows a top perspective view of an example housing of someembodiments.

FIG. 3B shows a closer view of an interior of the housing, showing thefluid paths and the transverse recesses of some embodiments.

FIG. 4 shows an example exterior of a solid source chemical sublimatorof some embodiments.

FIG. 5 shows an example filter frame of some embodiments.

FIG. 6 shows a bottom perspective view of the filter frame of FIG. 5 .

FIG. 7 shows a side view of the filter frame with the sublimator axis.

FIG. 8A shows a top view of the filter frame in FIGS. 5-7 .

FIG. 8B shows a bottom view of the filter frame in FIGS. 5-7 .

FIG. 9 shows a top view of a filter insert.

FIG. 10 shows a cross sectional side view of the filter insert of FIG. 9.

FIG. 11 shows a cross sectional perspective view of the filter insertshown in FIGS. 9-10 .

FIG. 12 shows a cross-section of an example solid source chemicalsublimator that includes a housing, a lid, a conduit, one or moreconductive protrusions, and a base according to some embodiments.

FIG. 13A shows an example lid that may be included in a solid sourcechemical sublimator according to some embodiments.

FIG. 13B illustrates a cross-sectional detail view of an example solidsource chemical sublimator according to some embodiments.

FIG. 14 shows an example solid source chemical sublimator showing aplurality of conductive protrusions.

FIG. 15 shows how the conduit, the conductive protrusions, and the basemay be assembled, according to some embodiments.

FIG. 16 shows an aspect of an example solid source chemical sublimatorthat has a plurality of resonators according to some embodiments.

DETAILED DESCRIPTION

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.Described herein are systems and related methodologies for deliveringvaporized or sublimed reactant in a high capacity deposition module.

The following detailed description details certain specific embodimentsto assist in understanding the claims. However, one may practice thepresent invention in a multitude of different embodiments and methods,as defined and covered by the claims.

A chemical reactant or solid source delivery system can include a solidor liquid source vessel and a heating means (e.g., a heater such asradiant heat lamps, resistive heaters, and the like). The vesselincludes the solid (e.g., in powder form) or liquid source precursor.The heater heats up the vessel to vaporize the reactant in the vessel.The vessel can have an inlet and an outlet for the flow of a carrier gas(e.g., N₂) through the vessel. The carrier gas may be inert. Generally,the carrier gas sweeps reactant vapor (e.g., sublimated chemicalreactant) along with it through the vessel outlet and ultimately to asubstrate reaction chamber. The vessel typically includes isolationvalves for fluidly isolating the contents of the vessel from the vesselexterior. One isolation valve may be provided upstream of the vesselinlet, and another isolation valve may be provided downstream of thevessel outlet. The source vessel of some embodiments comprises, consistsessentially of, or consists of a sublimator. As such, wherever a “sourcevessel” is mentioned herein, a sublimator (such as a “solid sourcechemical sublimator”) is also expressly contemplated.

Chemical vapor deposition (CVD) is a known process in the semiconductorindustry for forming thin films of materials on substrates such assilicon wafers. In CVD, reactant vapors (including “precursor gases”) ofdifferent reactant chemicals are delivered to one or more substrates ina reaction chamber. In many cases, the reaction chamber includes only asingle substrate supported on a substrate holder (such as a susceptor),with the substrate and substrate holder being maintained at a desiredprocess temperature. In typical CVD processes, mutually reactivereactant vapors react with one another to form thin films on thesubstrate, with the growth rate being related to the temperature and theamounts of reactant gases. In some variants, energy to drive thedeposition reactants is supplied in whole or in part by plasma.

In some applications, the reactant gases are stored in gaseous form in areactant source vessel. In such applications, the reactants are oftengaseous at standard pressures and temperatures of around 1 atmosphereand room temperature. Examples of such gases include nitrogen, oxygen,hydrogen, and ammonia. However, in some cases, the vapors of sourcechemicals (“precursors”) that are liquid or solid (e.g., hafniumchloride, hafnium oxide, zirconium dioxide, etc.) at standard pressureand temperature are used. For some solid substances (referred to hereinas “solid source precursors”, “solid chemical reactants”, or “solidreactants”), the vapor pressure at room temperature is so low that theyare typically heated and/or maintained at very low pressures to producea sufficient amount of reactant vapor for the reaction process. Oncevaporized (e.g., sublimed), it is important that the vapor phasereactant is kept at or above the vaporizing temperature through theprocessing system so as to prevent undesirable condensation in thevalves, filters, conduits, and other components associated withdelivering the vapor phase reactants to the reaction chamber. Vaporphase reactants from such naturally solid or liquid substances areuseful for chemical reactions in a variety of other industries.

Atomic layer deposition (ALD) is another known process for forming thinfilms on substrates. In many applications, ALD uses a solid and/orliquid source chemical as described above. ALD is a type of vapordeposition wherein a film is built up through self-saturating reactionsperformed in cycles. The thickness of the film is determined by thenumber of cycles performed. In an ALD process, gaseous reactants aresupplied, alternatingly and/or repeatedly, to the substrate or wafer toform a thin film of material on the wafer. One reactant adsorbs in aself-limiting process on the wafer. A different, subsequently pulsedreactant reacts with the adsorbed material to form a single molecularlayer of the desired material. Decomposition may occur through mutualreaction between the adsorbed species and with an appropriately selectedreagent, such as in a ligand exchange or a gettering reaction. In someALD reactions, no more than a molecular monolayer forms per cycle.Thicker films are produced through repeated growth cycles until thetarget thickness is achieved.

In some ALD reactions, mutually reactive reactants are kept separate inthe vapor phase with intervening removal processes between substrateexposures to different reactants. For example, in time-divided ALDprocesses, reactants are provided in pulses to a stationary substrate,typically separated by purging or pump down phases; in space-divided ALDprocesses, a substrate is moved through zones with different reactants;and in some processes aspects of both space-divided and time-divided ALDcan be combined. The skilled artisan will appreciate that some variantsor hybrid processes allow some amount of CVD-like reactions, eitherthrough selection of the deposition conditions outside the normal ALDparameter windows and/or through allowing some amount of overlap betweenmutually reactive reactants during exposure to the substrate.

Reactant source vessels are normally supplied with gas lines extendingfrom the inlet and outlet, isolation valves on the lines, and fittingson the valves, the fittings being configured to connect to the gas flowlines of the remaining substrate processing apparatus. It is oftendesirable to provide a number of additional heaters for heating thevarious valves and gas flow lines between the reactant source vessel andthe reaction chamber, to prevent the reactant vapor from condensing anddepositing on such components. Accordingly, the gas-conveying componentsbetween the source vessel and the reaction chamber are sometimesreferred to as a “hot zone” in which the temperature is maintained abovethe vaporization/condensation/sublimation temperature of the reactant.

FIG. 1 shows a solid source chemical sublimator 100 that can be used asa chemical vaporizer in some embodiments. The sublimator can contain achemical reactant, example a solid or liquid source precursor. A “solidsource precursor” has its customary and ordinary meaning in the art inview of this disclosure. It refers to a source chemical that is solidunder standard conditions (i.e., room temperature and atmosphericpressure). In some embodiments, the solid source chemical sublimator 100can include a base 140, a filter frame 120, a filter 130, and a housing110. The solid source chemical sublimator 100 may define a sublimatoraxis 104. The filter 130 can have a porosity configured to restrict apassage (or transfer) of a chemical reactant through the filter. FIG. 1should not be viewed as limiting the number of elements the solid sourcechemical sublimator 100 can contain, as described herein. In someembodiments, the housing 110 is adapted to be mechanically attached tothe base 140. This may be done using one or more of attachment devices(e.g., bolts, screws, etc.). In certain embodiments, the housing 110 andthe base 140 are mechanically attached in a gas-tight fashion. In someembodiments, the solid source chemical sublimator 100 comprises thefilter frame 120 and filter 130, but does not comprise the base 140 (forexample, the filter frame 120 can support the filter 130 and providecontainment on surfaces of the interior 114 not enclosed by the filter).In some embodiments, the base 140 is integral in the filter frame 120.In some embodiments, the base 140 is detachably immobilized on thefilter frame 120.

In certain configurations, the base 140 is adapted to hold solid sourcechemical. The base 140 may comprise a substantially planar surface forholding the chemical reactant, but other shapes and variants arepossible. The filter frame 120 can be configured to allow carrier gas topass therethrough, as described in more detail herein. In someembodiments, filter frame 120 is disposed adjacent the filter 130, asshown. In certain configurations, adjacent includes being in physicalcontact. The solid source chemical sublimator 100 can define an interior114, such as the space between the interior of the filter 130 walls andbetween a ceiling of the housing 110 and a floor of the base 140. Insome embodiments, the interior 115 is configured to contain chemicalreactant such as solid source chemical. The solid source chemicalsublimator 100 or portions thereof, such as the filter frame 120 and thefilter 130, may be formed in a variety of ways. For example, the solidsource chemical sublimator 100 may include two or more lateral sectionsthat are stacked and/or attached to one another. In anotherconfiguration, the filter 130 can fit inside (e.g., snap fit, slide fit,friction fit, etc.) the filter frame 120. In some embodiments, thefilter frame 120 can be disposed adjacent at least a portion of an outersurface of the filter 130.

In some embodiments, a height of the assembly of the solid sourcechemical sublimator 100 can be in the range of about 25 cm-120 cm. Insome embodiments, the height can be in the range of about 50 cm-100 cm,and is about 60 cm (about 24 inches) in some embodiments. In someembodiments, the width (e.g., diameter) of the solid source chemicalsublimator 100 can be in the range of about 20 cm-50 cm. In someembodiments, the width of the solid source chemical sublimator 100 canbe in the range of about 30 cm-40 cm, and is about 38 cm (about 15inches) in certain embodiments. In some embodiments, the vessel 104 canhave a height:diameter aspect ratio in the range of about 1-4. In someembodiments, the vessel occupies a shape approximating a cylinder, butother shapes are possible. As such, in some embodiments, the housing 110comprises, consists essentially of, or consists of a cylindrical shape.In some embodiments, the mass of the solid source chemical sublimator100 (unfilled) in various embodiments described herein can range fromabout 10 kg-50 kg. In some embodiments, the mass of the filled solidsource chemical sublimator 100 can be in the range of about 35 kg-85 kg.Lower masses of vessels can allow for easier transportation, but highermasses can facilitate higher volume reactant and necessitate fewerrefills.

FIG. 2 shows another example solid source chemical sublimator 100 ofsome embodiments. As shown, the solid source chemical sublimator 100 caninclude a refill aperture 154 in the housing 110 through which chemicalreactant (e.g., solid precursor) can be placed into the solid sourcechemical sublimator 100. The housing 110 may include separate lid andsidewalls (as shown) or be formed from a single structure. The lid maycomprise a cylindrical shape. In some embodiments, the housing lid andbase 140 are fluidly sealed such that gas substantially cannot enterand/or escape the vessel 104, except as described herein. The chemicalreactant can be housed in the interior 114 of the solid source chemicalsublimator 100. As shown, in some embodiments the solid source chemicalsublimator 100 can include a receiving portion 158 that can beconfigured to receive a corresponding heating rod 162. Other heatingelements may be included, such as those described herein. The heatingelements, including the heating rod 162, can be configured to allow theinterior 114 to reach an operating temperature, described in more detailherein. In some embodiments, one or more controllers (not shown) can beincluded and configured to perform ALD, as described in more detailherein. In some embodiments, the one or more controllers includeprocessors and memory programmed to perform ALD. The one or morecontrollers can be configured to control any heaters in the depositionmodule, pumps, valves to pumps for pressure control, robotic control forsubstrate handling, and/or valves for control of vapor flow, includingcarrier flow to and vapor flow from the solid source chemical sublimator100.

The illustrated solid source chemical sublimator 100 and any attacheddeposition module are particularly suited for delivering vapor phasereactants to be used in one or more vapor phase reaction chambers. Thevapor phase reactants can be used for chemical deposition (CVD) orAtomic Layer Deposition (ALD). In some embodiments, control processorsand programming stored on computer-readable media are included such thatthe embodiments disclosed herein are configured to perform ALD. Incertain embodiments, control processors and programming stored oncomputer-readable media are included such that the embodiments disclosedherein are configured to perform CVD.

Inlet flow of a carrier gas may occur at one end of the solid sourcechemical sublimator 100, such as near the bottom of the illustratedembodiment. The flow of carrier gas into the solid source chemicalsublimator 100 may be at one or more inlets (not shown) in the filterframe 120. The filter frame 120 can include channels (e.g., recesses,protrusions) or portions thereof to guide carrier gas flow therethrough.The flow rate of the carrier gas can be controlled by opening and/orclosing associated one or more inlet valves (not shown). An inlet may beat or near the bottom of the solid source chemical sublimator 100 or ator near the top of the solid source chemical sublimator 100. An outletmay be disposed on an opposite side of the solid source chemicalsublimator 100. For example, the outlet may be disposed at a top of thesolid source chemical sublimator 100. However, other configurations arepossible. For example, the outlet may be disposed at or near the bottomof the solid source chemical sublimator 100 and/or the outlet may bedisposed at or near the same end as the inlet. The inlet and outlet canbe disposed such that a fluid path as described herein is disposedbetween the inlet and the outlet.

The filter frame 120 can include fluid paths machined (e.g., milled,formed) in the filter frame 120. The fluid paths 150 may includerecesses (as shown) or protrusions. Additionally or alternatively, thehousing 110 may include housing recesses or housing ridges 112 (asshown). Such housing ridges 112 may provide a better structural fitbetween the housing 110 and the filter frame 120, though the housingridges 112 can additionally or alternatively provide structural boundaryto the fluid paths 150. The fluid paths 150 may be formed in the fluidpaths 150 (as shown) and/or in the housing 110.

Fluid (such as a carrier gas) may be inserted into an end of the solidsource chemical sublimator 100 (e.g., the bottom) and pass through thefluid paths 150 within the filter frame 120, for example. The fluidpaths 150 may run along an exterior of the filter frame 120.Additionally or alternatively, the filter frame 120 may be disposedalong an inner surface of the housing 110. In some embodiments, thefluid paths 150 run circumferentially about the filter frame 120. Thefilter frame 120 may comprise one or more ring pathways stackedvertically, as shown. In such embodiments, one or more transverserecesses or paths (not shown in FIG. 2 ) may allow for fluid flowbetween each ring pathway. The pitch of each ring pathway may be said tobe zero since each pathway is parallel to a ground level and/or the base140. Accordingly, fluid flow may occur along an exterior of the filterframe 120, for example, but the fluid may flow upward generally in thedirection of the sublimator axis 104. Thus, fluid flow can be around aperimeter of the filter frame 120 (e.g., around half of the perimeter ateach level of pathway (e.g., ring pathway)) before a transverse path isreached. The number of layers of pathways can range from between about12 and 45, and in some embodiments the number is about 23.

In some embodiments, the path comprises a continuous path having asubstantially constant pitch that is greater than zero. Thus, in suchembodiments, the fluid path 150 may include a single path between aninlet and an outlet that continually slopes (e.g., upward), relative tothe direction of flow. The slope relative to the direction of flow maybe upward or downward.

It will be appreciated that longer path lengths can increase a length oftime for gas exposure to the sublimed solid source chemical. The fluidpaths 150, taken together, can have a total length in the range of about500 cm-2500 cm. In some embodiments, the total length is in the range ofabout 750 cm-1800 cm, and in the illustrated embodiment is about 1400 cm(3556 inches).

A filter 130 can be included between the interior 114 and the filterframe 120 to restrict, slow, reduce, inhibit, or even prevent a passageof the chemical reactant (e.g., non-sublimed reactant) from passingthrough the filter 130. In this way, solid reactant may be preventedfrom inadvertently passing into the fluid paths 150 (e.g., duringshipping). The filter 130 can comprise, consist essentially of, orconsist of a ceramic material (e.g., ceramic filter media) or a metalmesh, or a combination of these. The metal mesh may include, forexample, stainless steel, aluminum, or another durable metal. Similarly,in some embodiments, one or more of the housing 110 (e.g., includinglid) and/or base 140 can comprise, consist essentially of, or consist ofa metal. The housing 110, housing lid 113, and/or base 140 can each bemonolithic metal parts in some embodiments. The porosity of the filter130 can be configured to restrict the passage of the chemical reactantfrom the interior 114 to the fluid paths 150 to a rate of transfer thatis not substantially greater than a rate of sublimation of the chemicalreactant in the fluid path by a carrier gas. Thus, the filter 130 canpromote a flow of sublimed reactant that allows for an improvedsaturation rate of the carrier gas with sublimed precursor. The filtermaterial may be configured to restrict the passage of particles greaterthan a certain size, for example about 0.003 μm. The material cancomprise any of a variety of different materials typically incorporatedin gas or liquid filters, such as nickel fiber media, stainless steel,ceramics (e.g., alumina), quartz, or two or more of the listedmaterials. As described in more detail herein, the solid source chemicalsublimator 100 can include an elongated path to enable contact of thecarrier gas with a high volume of solid reactant. In some embodiment,the porosity of the filter 130 restricts movement of chemical reactantfrom the interior 114 to the fluid path 150, such that the rate oftransfer of chemical reactant from the interior 114 to the fluid path150 is not substantially more than the rate at which the chemicalreactant is sublimated by a carrier gas in the fluid path 150. It willbe appreciated that the rate of transfer of chemical reactant from theinterior 114 to the fluid path 150 can be expressed as a ratio of amountof chemical reactant to time (e.g., mol/second, g/minute, etc.), andthat a rate at which chemical reactant is sublimated in the fluid pathcan also be expressed as a ratio of amount of chemical reactant to time(e.g., mol/second, g/minute, etc.). Thus, it will be appreciated that acomparison the rate of transfer of chemical reactant from the interior114 to the fluid path 150 to the rate of sublimation of the chemicalreactant in the fluid path 150 can be readily converted into the sameunits (if they are not already in the same units), so that an efficientcomparison can be made. In some embodiments, the rate of transfer ofchemical reactant from the interior 114 to the fluid path 150 issubstantially the same as the rate of sublimation of the chemicalreactant on the fluid path, for example. “Substantially” in this contexthas its ordinary and customary meaning as would be understood by one ofskill in the art in view of this disclosure. It can refer to two ratesthat do not appreciably differ, for example, so as to avoid clogging ofthe fluid path 150 by reactant (which may occur if the rate of transferthrough the filter is substantially greater than the rate ofsublimation), and so that sublimation can continuously occur over themajority of the surface area of the flow path that is configured to holdreactant. If more numerical precision of “substantially” is desired, insome embodiments, the rate of transfer can be within ±30% of the rate ofsublimation, for example, within ±25%, ±20%, ±15%, ±10%, or ±5%,of therate of sublimation.

Fluid (such as carrier gas and/or reactant gas) that passes through thefluid paths 150 can exit the solid source chemical sublimator 100 at oneor more exit points or outlets (not shown), which can lead to other flowcontrol devices (e.g., valves) and/or one or more deposition chambers.The effluent from the solid source chemical sublimator 100 then includesthe carrier gas and the reactant gas vaporized from within the interiorof the solid source chemical sublimator 100. In some embodiments, theinterior 114 is configured to contain a head space after it is filledwith chemical reactant. The head space can be in fluid communicationwith the fluid path 150, and/or the inlet and outlet (not shown), andcan be configured for sublimation of the chemical reactant by the fluid(e.g., carrier gas) in the headspace. Accordingly, the headspace canprovide a failsafe so that the chemical reactant can continue to besublimated even if the filter 130 is clogged, or otherwise unable toconvey chemical reactant to the fluid path 150. For example, the headspace can be in fluid communication with the fluid path 150, in whichthe fluid communication does not traverse the filter 130, thuspermitting sublimation of chemical reactant to the flow path, even ifthe filter is clogged of otherwise unable to convey chemical reactant tothe flow path 150.

Inactive or inert gas is preferably used as the carrier gas for thevaporized precursor. The inert gas (e.g., nitrogen, argon, helium, etc.)may be fed into the solid source chemical sublimator 100 through one ormore sublimator inlets (not shown). In some embodiments, different inertgases may be used for various processes and in various systems describedherein. It will be appreciated that additional valves and/or otherfluidic control elements may be included that are not shown. Forexample, in addition to inlet valves, separate outlet valves can also beprovided.

It will be appreciated that additional valves and/or other fluidicelements may be included that are not shown. Additional valves and otherfluidic elements may be included that are not shown in certainconfigurations. Additional information about fluidics of the system maybe found in U.S. Pat. No. 8,137,462, filed on Oct. 10, 2007 and titled“PRECURSOR DELIVERY SYSTEM,” which is hereby incorporated by referenceherein in its entirety for all purposes.

Some embodiments of methods described herein may include a pretreatmentprocess applied to the substrate surface. A pretreatment may compriseone or more processes. In the pretreatment, the substrate surface onwhich a first reactant (e.g., comprising a metal) is to be deposited maybe exposed to one or more pretreatment reactants and/or to specificconditions, such as temperature or pressure. A pretreatment may be usedfor any number of reasons, including to clean the substrate surface,remove impurities, remove native oxide, and/or provide desirable surfaceterminations to facilitate subsequent deposition reactions oradsorption. In some embodiments, a pretreatment comprises exposing thesubstrate surface to one or more pretreatment reactants, such as anoxidation source and/or cleaning reactant, such as H₂O, O₃, HCl, HBr,Cl₂, HF, plasma products, etc. In some embodiments, a pretreatmentprocess comprises one or more exposures of the substrate of a suitablechemical, the exposures ranging from about 0.05 s to about 600 s,preferably from about 0.1 s to about 60 s. In some embodiments, thepressure during a pretreatment process is maintained between about 0.01Torr and about 100 Torr, preferably from about 0.1 Torr to about 10Torr. In some embodiments, multiple pretreatment reactants are usedsequentially or simultaneously. In some embodiments, a pretreatment mayinvolve multiple applications of one or more pretreatment reactants.

A pretreatment process may utilize pretreatment reactants in vapor formand/or in liquid form. The pretreatment process may be performed at thesame temperature and/or pressure as the subsequent ALD process; however,it may also be performed at a different temperature and/or pressure. Forexample, where an ex situ pretreatment involves the immersion of thesubstrate in an aqueous solution, it may be desirable to allow thepretreatment to proceed at a higher pressure than the ALD process, whichmay be performed at relatively low pressures that could undesirablyevaporate the pretreatment reactant.

Reactants may also be referred to as precursors where the reactantleaves element(s) in the film being deposited. In some embodiments witha stationary substrate (time divided ALD) the first reactant isconducted into a reaction chamber in the form of vapor phase pulse andcontacted with the surface of the substrate. Where the first reactant isa precursor to be adsorbed, conditions can be selected such that no morethan about one monolayer of the precursor is adsorbed on the substratesurface in a self-limiting manner. The first precursor pulse is suppliedin gaseous form. The first precursor gas is considered “volatile” forpurposes of the present description if the species exhibits sufficientvapor pressure under the process conditions to transport the species tothe workpiece in sufficient concentration to saturate exposed surfaces.

In some embodiments the first precursor contacts the substrate for about0.01 seconds to about 60 seconds, for about 0.02 seconds to about 30seconds, for about 0.025 seconds to about 20 seconds, for about 0.05seconds to about 5.0 seconds, about 0.05 seconds to about 2.0 seconds orabout 0.1 seconds to about 1.0 second. As the skilled artisan willappreciate, exposure time to ensure surface saturation will depend onreactor volume, size of the substrate, precursor concentration in thecarrier gas, and process conditions.

The first precursor employed in the ALD type processes may be solid,liquid, or gaseous material under standard conditions (room temperatureand atmospheric pressure), provided that the first precursor is in vaporphase before it is conducted into the reaction chamber and contactedwith the substrate surface. In some embodiments, the first precursor mayinclude a metal and may be a solid source material under standardconditions, such as in the form of a powder in the solid source chemicalsublimator 100 described herein.

Excess first reactant and reaction byproducts, if any, may be removedfrom the substrate surface, for example by supply of inert gas such asnitrogen or argon. Vapor phase precursors and/or vapor phase byproductsare removed from the substrate surface, for example by evacuating thechamber with a vacuum pump and/or by replacing the gas inside thereactor with an inert gas such as argon or nitrogen. Typical removaltimes are from about 0.05 to 20 seconds, more preferably between about 1and 10 seconds, and still more preferably between about 1 and 2 seconds.However, other removal times can be utilized if necessary, such as whendepositing layers over extremely high aspect ratio structures or otherstructures with complex surface morphology is needed. The appropriateremoval times can be readily determined by the skilled artisan based onthe particular circumstances.

In some embodiments, removing excess first reactant and reactionbyproducts, if any, may comprise moving the substrate so that the firstreactant no longer contacts the substrate. In some embodiments, noreactant may be removed from the various parts of a chamber. In someembodiments, the substrate is moved from a part of the chambercontaining a first precursor to another part of the chamber containing asecond reactant or no reactant at all. In some embodiments the substrateis moved from a first reaction chamber to a second, different reactionchamber. In such embodiments, the substrate may be moved, for example,through a zone or curtain of inert gas to aid removal, analogous topurging a chamber for a stationary substrate.

The substrate may be contacted with a second reactant (e.g., precursor).In some embodiments, the second reactant comprises oxygen (e.g., watervapor, ozone, etc.). In some embodiments the second precursor contactsthe substrate for about 0.01 seconds to about 60 seconds, for about 0.02seconds to about 30 seconds, for about 0.025 seconds to about 20seconds, for about 0.05 seconds to about 5.0 seconds, about 0.05 secondsto about 2.0 seconds or about 0.1 seconds to about 1.0 second. However,depending on the reactor type, substrate type and its surface area, thesecond precursor contacting time may be even higher than 10 seconds. Insome embodiments, particularly batch reactors with high volumes,contacting times can be on the order of minutes. The optimum contactingtime can be readily determined by the skilled artisan based on theparticular circumstances.

The concentration of the second precursor in the reaction chamber may befrom about 0.01% by volume to about 99.0% by volume. And the secondprecursor may flow through the reaction chamber at a rate of betweenabout 1 standard cm³/min and about 4000 standard cm³/min for typicalsingle substrate reactors. The skilled artisan will appreciate thatreaction conditions outside the above ranges may be suitable for certaintypes of reactors.

Excess second reactant and gaseous by-products of the surface reaction,if any, may be removed from the substrate surface. In some embodimentsexcess reactant and reaction byproducts are preferably removed with theaid of an inert gas. The steps of contacting and removing may beoptionally repeated until a thin film of the desired thickness has beenformed on the substrate, with each cycle leaving no more than amolecular monolayer in a pure ALD process. However, the skilled artisanwill appreciate that in some embodiments, more than a monolayer may beachieved by modifying conditions to be outside theoretical ALDconditions. For example, some amount of overlap between the mutuallyreactive reactants may be allowed to result in partial or hybridCVD-type reactions. In some cases, it might be desirable to achieve atleast partial decomposition of at least one the various precursorsthrough selection of temperatures above the normal ALD window, byinjection of energy through other means (e.g., plasma products), orcondensation of multiple monolayers of the first reactant may beachieved by selection of temperatures below the normal ALD window forthose reactants.

Various other modifications or additions to the process described aboveare possible. For example, more complicated cycles may include phasesfor additional precursors or other types of reactants (e.g., reducingagents, oxidizing agents, gettering agents, plasma or thermaltreatments, etc.). Different cycles may be employed at selected relativefrequency to tune compositions of the desired films. For example,silicon oxynitride may include 5 silicon oxide cycles for every 1silicon nitride cycles, or any other desired ratio of cycles, dependingupon the desired nitrogen content, and the ratios may change during thedeposition if grading is desired in the layer composition. Additionally,because the process is cyclical, the “first” reactant may be suppliedsecond without materially altering the process.

In some embodiments, the electronics and/or computer elements for use incontrolling one or more deposition chambers can be found elsewhere inthe system. For example, central controllers may control both apparatusof the one or more chambers themselves as well as control the valvesthat connect to the solid source chemical sublimator 100 and anyassociated heaters. One or more valves may be used to control the flowof gas throughout the multiple chamber deposition module 300.

In some circumstances, precursor source vessels such as the solid sourcechemical sublimator 100 are supplied with a head pressure of inert gas(e.g., helium) in the vessel when they are filled or recharged withprecursor powder to minimize disturbance while moving the vessels.Before operation, it may be desirable to vent this overpressure.Accordingly, in certain embodiments, a separate vent valve can be usedto relieve pressure within the interior 114 of the solid source chemicalsublimator 100 before operation.

As will be appreciated by the skilled artisan, it may be advantageous toreduce the volume or footprint that solid source chemical sublimators100 would entail. Compact vessel assemblies can reduce such a footprint.In certain embodiments, each solid source chemical sublimator 100 canhave an area (e.g., on which the solid source chemical sublimator 100 isplaced) of between about 75 cm² and 150 cm².

An ability to hold a large mass and/or volume of solid source chemicalin the solid source chemical sublimator 100 can increase the time neededbetween recharging treatments. Moreover, this can allow for greater massof sublimated solid source chemical in the same amount of time. Thus, insome embodiments the solid source chemical sublimator 100 can be adaptedto hold in the range of about 7.5 kg-20 kg of typical solid sourcechemical for vapor phase deposition, particularly inorganic solid sourcemetal or semiconductor precursors, such as HfCl₄, ZrCl₄, AlCl₃, orSiI₄.In some embodiments the solid source chemical sublimator 100 can beadapted to hold in the range of about 5 kg-12 kg of solid sourcechemical. In some embodiments the solid source chemical sublimator 100can be adapted to hold at least 15 kg of typical solid source chemical.A height of the solid source chemical can be between about 50% to 90% ofthe height of the solid source chemical sublimator 100. In someembodiments, the height of the solid source chemical can be betweenabout 65% and 80%. The headroom above that fill height can be reservedas head space to facilitate collection of reactant vapor above the solidprecursor, and allow carrier gas flow to pick up such vapor.

Longer path lengths and/or greater masses of solid source chemical thatthe sublimator can hold can lead to a greater amount of precursor to thedeposition chambers in the same amount of time. In some cases, thelonger path length and/or greater masses of solid source chemical canincrease the amount of saturation that can be achieved in the sameamount of time. In some embodiments, an elapsed time between twoconsecutive vapor processes (e.g., a pulse/purge length) can be betweenabout 100 ms-3 s. In some embodiments, the elapsed time can be betweenabout 30 ms-1.5 s.

The size of a vessel can be related to the amount of solid sourcechemical. For example, a ratio of a volume (in cm³) enclosed by thevessel to the mass (in kg) of solid source chemical it can hold can bein a range of about 20-45. In certain configurations, the ratio can bein a range of about 1-10. These ranges can be determined in part bynatural limitations placed on the vessel, the materials used, and spacelimitations.

The fluid paths 150 can have a height and a width (e.g., recess heightand width). In some embodiments, the height can be between about 2 cm-10cm. In some embodiments, the height can be between about 1 cm-6 cm. Insome embodiments, the width can be between about 1 cm-6 cm. In someembodiments, the width can be between about 0.2 cm-4 cm. In someembodiments, the height and width can define a height:width aspect ratioof 3-7. In some embodiments, the height and width can define aheight:width aspect ratio of between about 4-5.5.

In some embodiments, a deposition module and/or a solid source chemicalsublimator 100 can include one or more heating elements. In someembodiments, one or more of the heating elements can be disposedvertically adjacent or vertically proximate the solid source chemicalsublimator 100. In some embodiments, the one or more heating elements isconfigured to heat the sublimator 100 by conduction. In certainembodiments, a heater plate that is disposed below the base 140 may beincluded. In certain embodiments, a heater can be disposed above thehousing 110. In some embodiments, one or more valves may be heatedconductively and/or radiantly. In some embodiments, one or more hot feedtroughs can be included in the walls and/or center (e.g., in theinterior 114) of the solid source chemical sublimator 100 to providemore direct heat to the solid chemical reactant. The solid sourcechemical sublimator 100 may be placed in a cabinet that is configured tobe gas tight to allow pumping down to low pressures, such as betweenabout 0.1 Torr and 20 Torr, e.g., about 5 Torr, and thus facilitateefficient radiant heating minimal conductive or convective losses to theatmosphere within the cabinet.

The solid source chemical sublimator 100 may be configured to operate atan operating temperature. For example, the operating temperature may bedetermined based on a desired flow rate of sublimed reactant through thefilter 130, as described herein. Additionally or alternatively, theoperating temperature may be determined based on a desired sublimingrate of the chemical reactant. In some embodiments, the operatingtemperature is in the range of about 20° C.-250° C. The selectedoperating temperature may depend, of course, upon the chemical to bevaporized. For example, the operating temperature may be about 160°C.-240° C., particularly about 170° C.-190° C. for HfCl₄; about 170°C.-250° C., particularly about 180° C.-200° C. for ZrCl₄; about 90°C.-110° C. for Al₂Cl₃; about 90° C.-120° C. for SiI₄. The skilledartisan will readily appreciate other temperatures may be selected forother source chemicals.

In some embodiments, the solid source assembly (as disclosed herein) canoperate at a target vacuum pressure. In some embodiments, the targetvacuum pressure can be in the range of about 0.5 Torr-20 Torr, such as 5Torr. In certain embodiments, the vacuum pressure in the solid sourceassembly can be regulated using one or more pressure controllers.

FIGS. 3A-3B show an example housing 110 with a plurality of fluid paths150. As described herein, the fluid paths 150 can be formed at leastpartially in an interior of the housing 110, within an exterior of thefilter frame 120, or both. FIG. 3A shows a top perspective view of anexample housing 110. FIG. 3B shows a closer view of an interior of thehousing 110, showing the fluid paths 150 and the transverse recesses170. The transverse recesses 170 may additionally or alternatively beformed in the filter frame 120. FIG. 4 shows an example exterior of asolid source chemical sublimator 100.

FIG. 5 shows an example filter frame 120. In some embodiments, thefilter frame 120 can include a base 140. In some embodiments, the filterframe 120 includes a lid (not shown). The filter frame 120 can includeone or more frame support elements 124, such as in the filter frame 120.The frame support elements 124 can be attached between consecutiveprotrusions 150 a of the filter frame 120. Alternating recesses can beformed between corresponding protrusions of the filter frame 120. Inthis way, the fluid paths 150 may be formed to allow the carrier gas topass therethrough. To allow flow of gas parallel to the sublimator axis104 (e.g., vertically) (e.g., between consecutive recesses 150 b), oneor more transverse recesses 170 can be formed (e.g., in the filter frame120). As described elsewhere, the transverse recesses 170 mayadditionally or alternatively be formed in the housing 110. On aparticular side of the filter frame 120, the transverse recesses 170 maybe formed in alternating protrusions (e.g., skipping every otheradjacent protrusion). Alternating transverse recesses 170 may be formedon an opposite side of the filter frame 120 (and/or housing 110). Inthis way, in order for the carrier gas to travel vertically, the gas mayinstead be directed horizontally around at least a portion (e.g., 180 o)of the filter frame 120 before encountering a next transverse recess170. In this way, flow path length of the carrier gas may be increasedto allow for greater saturation of the carrier gas with the sublimedchemical reactant. FIG. 6 shows a bottom perspective view of the filterframe 120 of FIG. 5 .

FIG. 7 shows a side view of the filter frame 120 with the sublimatoraxis 104. The sublimator axis 104 may run parallel to a general flow ofthe carrier gas between an inlet and an outlet of the filter frame 120.FIGS. 8A and 8B show a top view and bottom view of the filter frame 120in FIGS. 5-7 .

FIG. 9 shows a top view of a filter insert 200 of some embodiments. Afilter insert 200 can include a filter frame 120 and a filter 130. Insome embodiments, the filter insert 200 can include a base 140. In someembodiments, the filter insert 200 can include a lid (not shown). Thefilter insert 200 can be configured (e.g., shaped, sized) to fit withina corresponding housing 110, as described herein. The filter insert 200can have a filter frame width 182 or diameter. The filter frame width182 can be between about 20 cm and 50 cm. The filter frame 120 can havea wall thickness of between about 1 and 10 cm at the thickest parts. Insome embodiments, the wall thickness of the filter frame 120 is betweenabout 2 cm and 4 cm. The filter 130 can have a wall thickness of betweenabout 1 and 10 cm at the thickest parts. In some embodiments, the wallthickness of the filter 130 is between about 2 cm and 4 cm. A ratio ofthe wall thickness of the filter frame 120 to the wall thickness of thefilter frame 120 can be between about 0.3 and 2. In some embodiments theratio is about 1. In some embodiments, a filter insert 200 can beconfigured to be inserted into a housing 110, and then filled withchemical reactant. In some embodiments, a filter insert 200 can beconfigured to contain chemical reactant, and then be inserted into thehousing 110 (while already containing the chemical reactant). In someembodiments, a filter insert 200 can be configured to be inserted into ahousing 110 that already contains chemical reactant.

FIG. 10 shows a cross sectional side view of the filter insert 200 ofFIG. 9 . FIG. 11 shows a perspective view of the filter insert 200 shownin FIGS. 9-10 .

FIG. 12 shows a cross-section of an example solid source chemicalsublimator 300 that includes a housing 310, a lid 306, a heat transferconduit 360, one or more conductive protrusions 364, and a base 340. Thehousing 310 can have a housing axis (not labeled), which may beanalogous to the sublimator axis 104 disclosed above. The housing axismay be perpendicular to a plane of the lid 306 and/or the base 340 andextend along a length of the housing 310. The housing 310 can have adistal portion that is configured to hold solid chemical reactanttherein. The distal portion may extend along the housing axis from thebase 340 to some point in the housing 310 (and/or include the spaceencompassed thereby).

With continued reference to FIG. 12 , the lid 306 can be disposed on aproximal portion of the housing 310. For example, the lid 306 may beintegral with the housing 310 or may simply rest on the housing 310. Thelid 306 may be removably or permanently attached to the housing 310 insome designs. For example, the lid may be attached by friction (e.g., athreading), compressive force (e.g., clamps), and/or screws. The lid 306can include a fluid inlet 384 and a fluid outlet 388. As shown, the lid306 defines a serpentine path 374 within a distal portion of the lid306. The lid 306 is adapted to allow gas flow within the flow path.

The solid source chemical sublimator 300 shown includes a filter 396disposed between the serpentine path 374 and the distal portion of thebase 340. In some configurations, the filter 396 is disposed between thefluid outlet 388 and the base 340 and/or the distal portion of thehousing 310. The filter 396 can have a porosity adapted to restrict apassage of a solid chemical reactant therethrough. For example, thefilter 396 can have a porosity of between about 0.0001 microns and about85 microns. In some designs, the porosity is between about 0.1 micronsand about 40 microns, and in some designs is about 20 microns. In someconfigurations, the filter 396 covers some, but not all, of theserpentine path 374 (it is noted that to “cover” or provide “coverage”for a serpentine path, the filter does not necessarily need to be placedon top of the serpentine path, and may cover some or all of theserpentine path 374, for example, by underlying the serpentine path374). In some configurations, the filter 396 covers a majority of theserpentine path 374. In some configurations, the filter 396 covers theserpentine path 374. In some configurations, the filter 396 contacts adistal surface of the serpentine path 374.

The filter 396 can include an inlet that is in fluid communication withthe fluid inlet 384 of the lid 306. The inlet of the filter can beconfigured to allow solid chemical reactant to pass therethrough intothe housing. The filter inlet may facilitate filling the solid sourcechemical sublimator 300 with solid source reactant, for example bypermitting filling without removing the filter 396 and/or lid 306.

The filter 396 can comprise at least one of a ceramic or a metal (e.g.,stainless steel, aluminum, etc.). The filter 396 may form a disk thathas an aspect ratio of a thickness to a diameter of between about 25 and1000. The filter 396 can have a diameter of between about 20 cm and 50cm. One or both of the fluid inlet 384 and/or the fluid outlet 388 maybe in fluid communication with the serpentine path 374.

In some configurations, the distal-facing portion of the lid 306contacts a proximal surface of the filter 396. Additionally oralternatively, the proximal portion of the housing 310 may contact adistal surface of the filter 396.

The serpentine path 374 can comprise one or more antiparallel segmentsand/or paths in the lid 306. The antiparallel segments and/or paths maybe disposed in a common plane. The serpentine path 374 can be milled inthe lid 306, or can be defined by a separate piece of material not partof the lid 306. In some designs, the serpentine path 374 includes atransverse path that connects at least two consecutive fluid paths of aplurality of fluid paths of the serpentine path 374. The transverse pathmay be oriented substantially orthogonal to at least one of the twoconsecutive fluid paths.

In some embodiments, a proximal portion of the housing can include aheadspace that is in fluid communication with the serpentine path 374such that a carrier gas is capable of being saturated by the chemicalreactant in the headspace and in the serpentine path 374. The headspacemay remain in fluid communication with the flow path during a cloggingof the filter or serpentine path. One or both of the fluid inlet 384and/or the fluid outlet 388 can include a corresponding valve configuredto allow fluid to flow therethrough (see, e.g., FIG. 13B). Additionally,or alternatively, one or both of the fluid inlet 384 and/or the fluidoutlet 388 can include a corresponding filter 390, 392 that isconfigured to restrict particulate flow therethrough. A face of the lid306 can include the serpentine path 374 and the face can be circular.The housing 310 may be cylindrical and/or the filter may be circular. Asused herein, “cylindrical,” “circular,” and other descriptions of shapecan encompasses slight differences from true Euclidian shapes, and thuscan include “generally circular” and “generally cylindrical” as well.

The heat transfer conduit 360 can be conductive and be placed inconductive thermal communication with a heat source. The heat source mayinclude one or more heating elements, such as a heating rod 362. Theheating rod 362 can be disposed approximately along the axis of thehousing. For example, the heating rod 362 may be disposed within theheat transfer conduit 360, as shown in FIG. 12 . Accordingly, a portionof the housing 310 remains disposed between the heating rod 362 and anysolid source reactant so that the solid source reactant does not contactthe heating rod. This can prevent the heating rod from being damaged bycontact with solid source reactant and/or deposition of solid sourcereactant on the heating rod. Other configurations are possible. Forexample, a heating plate may be disposed distal of the base 340. Theheating plate may be disposed adjacent (e.g., in conductive thermalcommunication with) or near the base 340. In some configurations, one ormore heating elements may be disposed adjacent and/or near sidewalls ofthe housing 310.

FIG. 13A shows an example lid 306 that may be included in a solid sourcechemical sublimator 300. The serpentine path 374 can be adapted to allowthe flow of gas therethrough. In some configurations, the serpentinepath 374 can be milled and/or machined into the lid 306 or the lid 306can be molded to have the serpentine path 374. In some embodiments, theserpentine path 374 can be milled out of a solid (e.g., cast) metalblock.

As shown in FIG. 13B, in some embodiments, the serpentine path 374 canbe in fluid communication with the fluid inlet 384 and/or the fluidoutlet 388. The serpentine path 374 can be in fluid communication withan inlet valve 398 and/or an outlet valve (not shown). In someembodiments, the fluid inlet 384 is fluidly connected to the fluidoutlet 388 by the serpentine path 374.

It will be appreciated that longer path lengths can increase a surfacearea of gas exposure of the solid source chemical. The serpentine path374 of the lid 306 can have a length in the range of about 2000 mm-8000mm. In some embodiments, the serpentine path 374 can have a length inthe range of about 3000 mm-5000 mm. As will be appreciated by theskilled artisan, it may be advantageous to reduce the volume orfootprint that the solid source chemical sublimator 300 would occupy.Compact sublimators can reduce or minimize such a footprint. In certainembodiments, the lid 306 can have a height of between about 25 mm-50 mm.In certain configurations, the lid 306 can have a height of betweenabout 15 mm-30 mm. In certain configurations, the lid 306 can have aheight of between about 40 mm-80 mm.

Greater masses and/or volumes of solid source chemical in and/or handledby the solid source chemical sublimator 300 can yield greater throughputof sublimated reactant. Moreover, this can allow for greater mass ofsublimated solid source chemical in the same amount of time. In someembodiments the serpentine path 374 can be adapted to contain in therange of about 750 g-2000 g of sublimated solid source chemical. Thechemical reactant may include inorganic solid source metal orsemiconductor precursors, such as HfCl₄, ZrCl₄, AlCl₃, or SiI₄. Longerpath lengths and/or greater masses of solid source chemical that the lid306 s can help process can lead to a greater amount of precursor to thedeposition chambers (not shown) in the same amount of time. In somecases, the longer path length and/or greater masses of solid sourcechemical can increase the concentration of sublimated precursor that canbe achieved in the same amount of time. In some embodiments, theserpentine path has a length effective to achieve saturation of thesublimated precursor at the temperature and pressure of sublimation. Insome embodiments, an elapsed time between two consecutive vaporprocesses (e.g., a pulse/purge length) can be between about 100 ms-3 s.In some embodiments, the elapsed time can be between about 30 ms-1.5 s.In some embodiments, a ratio of a volume or capacity (in mm³) of theserpentine path 374 to the total path length (in mm) of the lid 306 canbe in a range of about 400-1200. These ranges can be determined in partby natural limitations placed on the vessel, the materials used, andspace limitations.

FIG. 13B illustrates a cross-sectional detail view of an example solidsource chemical sublimator 300. In certain configurations, theserpentine path 374 of the lid 306 can have a recess height 370 and arecess width 372. In some embodiments, the recess height 370 can bebetween about 10 mm-50 mm. In some embodiments, the recess height 370can be between about 20 mm-40 mm. In some embodiments, the recess width372 can be between about 3.0 mm-20 mm. In some embodiments, the recesswidth 372 can be between about 5 mm-8 mm. In some embodiments, therecess height 370 and recess width 372 can define a height:width aspectratio of 3-7. In some embodiments, the recess height 370 and recesswidth 372 can define a height:width aspect ratio of between about4.0-5.5.

FIG. 14 shows an example solid source chemical sublimator 300 showing aplurality of thermally conductive protrusions 364. The solid sourcechemical sublimator 300 can include a thermally conductive heat transferconduit 360 disposed along the housing axis. The plurality of thermallyconductive protrusions 364 can be disposed radially around theconductive heat transfer conduit 360, as shown. Other configurations arepossible. The conductive protrusions 364 can be generally flat and mayhave a high (e.g., greater than 10, greater than 20, greater than 25)ratio of surface area (in mm²) to volume (in mm³). The distal portion ofthe housing 310 may be configured to hold solid chemical reactant withthe conductive heat transfer conduit 360 positioned therebetween. Asnoted above, the conductive heat transfer conduit 360 can be placed inconductive thermal communication with a heat source. The solid sourcechemical sublimator 300 may include at least three, five, six, seven,eight, nine, or more conductive protrusions 364. The conductiveprotrusions 364 may extend from the distal portion of the housing (e.g.,sidewalls, the base 340). The conductive protrusions 364 can be spacedradially from the housing axis. Additionally or alternatively, theconductive protrusions 364 can extend axially from the distal portion ofthe housing. The number of conductive protrusions 364 that extendaxially may be three, four, five, six, seven, eight, nine, or more andeach may be spaced radially from each other. For example, if there areeight conductive protrusions 364, the eight conductive protrusions maydisposed with an angle of about 45 degrees between any two adjacentconductive protrusions. For example, if there are six conductiveprotrusions 364, the six conductive protrusions may disposed with anangle of about 60 degrees between any two adjacent conductiveprotrusions.

The conductive protrusions 364 can aid in a distributed and/orcontrolled heat flow to the solid source chemical reactant. Thiscontrolled heat flow can inhibit or prevent unknown temperature currentsflowing throughout the reactant. Thermal modeling has shown thatconfigurations comprising eight radially-distributed conductiveprotrusions 364 (e.g., as illustrated in FIG. 15 ) can achieve efficientand uniform heat flow in the solid source chemical reactant, thusyielding efficient sublimation throughout the solid source chemicalreactant in the housing 310. In some configurations, the conductiveprotrusions 364 are not active heaters but serve as conductors of heatfrom an active heating element (e.g., the heating rod 362, and/or a baseplate heater), which may be below the base 340.

The conductive protrusions 364 may be in thermal communication with thedistal portion of the housing 310 and/or the base 340. The housing caninclude a receiving portion that is configured to allow the heatingelement (e.g., the heating rod 362) to be inserted therein. Thereceiving portion may be generally longitudinal and may be configured toextend axially a majority of an axial length of the housing 310. Thereceiving portion may be disposed so that the heating element isexternal to the housing when inserted (and thus, the heating elementdoes not contact the solid source chemical when inserted).

The solid source chemical sublimator can have a variety of dimensions.For example, in some configurations, it has an aspect ratio of axiallength to diameter of between about 20 and 0.5. Other configurations arepossible.

FIG. 15 shows how the heat transfer conduit 360, the conductiveprotrusions 364, and the base 340 may be assembled, according to oneconfiguration. As shown, eight conductive protrusions 364 are included,and each conductive protrusion 364 is in thermal communication with theheat transfer conduit 360 and each extends radially therefrom.Additionally, as shown, each of the conductive protrusions 364 may be inthermal communication with the base 340.

FIG. 16 shows an aspect of an example solid source chemical sublimator300 that comprises one or more resonators 380. The resonator(s) 380 mayadvantageously mix the reactant with the carrier gas, and thus mayachieve a higher concentration of sublimated precursor than the sourcevessel in the absence of resonators 380. Additionally or alternatively,the resonator(s) 380 may be helpful to inhibit or prevent caking of thesolid source reactant. In some configurations, the inhibition orprevention of caking is achieved by perturbing or agitating the solidsource reactant. For example, some configurations include structuralfeatures (e.g., resonators 380) within the housing 310 that encouragemixing of the flowing carrier gas with the reactant vapor formed fromvaporizing the solid reactant in the housing 310. The resonators 380 maybe vertical (e.g., axial) extensions extending from, for example, thebase 340. In certain configurations (not shown), the resonators 380 canbe extensions that extend horizontally from the side walls of thehousing 310, particularly in the lower approximately ⅓ of the height ofthe housing 310. The resonators 380 may be disposed in the distalportion of the housing 310. One or more of the resonators 380 cancomprise extensions disposed radially around the housing axis. Theresonators 380 can be configured to agitate the solid chemical reactantin the housing, for example through vibration and/or rotation.

Additional Embodiments

Some nonlimiting example configurations are provided below forillustration purposes.

In a 1st option, a solid source chemical sublimator comprises: a housinghaving an inner space and an inner surface facing the inner space; afilter having a first end and a second end, the filter having a porosityconfigured to restrict a passage of a solid chemical reactanttherethrough, the filter shaped and positioned to define a flow pathsurrounding the filter in a space between the filter and the innersurface; and one or more fluid paths defined between the filter and theinner surface of the housing, the one or more fluid paths configured toallow a fluid flow from the first end to the second end of the filter.

In a 2nd option, the solid source chemical sublimator of option 1,further comprising a filter frame configured to support the filter.

In a 3rd option, the solid source chemical sublimator of option 2,further comprising a base configured to receive the chemical reactantthereon, the filter frame immobilized on the base, the filter frameconfigured to be disposed within the housing.

In a 4th option, the solid source chemical sublimator of any of options1-3, wherein the porosity of the filter is configured to restrict thepassage of the solid chemical reactant from the interior to the flowpath to a rate of transfer that is not substantially greater than a rateof sublimation of the chemical reactant in the flow path by a carriergas.

In a 5th option, the solid source chemical sublimator of any of options1-4, further comprising a filter frame within the housing, the filterframe restraining a position of the filter.

In a 6th option, the solid source chemical sublimator of any of options1-5, wherein the flow path is disposed circumferentially about an outersurface of the filter, an inner surface of the housing, or both.

In a 7th option, the solid source chemical sublimator of any of options1-6, wherein the flow path is formed at least in part by a recessdisposed within the inner surface of the housing.

In a 8th option, the solid source chemical sublimator of any of options1-7, wherein the flow path is formed at least in part by a recessdisposed within the filter.

In a 9th option, the solid source chemical sublimator of any of options1-8, wherein the flow path comprises a winding path that traverses acircumference of the housing multiple times.

In a 10th option, the solid source chemical sublimator of any of options1-9, wherein the flow path comprises a spiral path about the innersurface of the housing.

In an 11th option, the solid source chemical sublimator of any ofoptions 1-10, wherein the flow path comprises a plurality of fluidpaths, and wherein a transverse path connects at least two consecutivefluid paths of the plurality of fluid paths.

In a 12th option, the solid source chemical sublimator of option 11,wherein the transverse path is oriented substantially orthogonal to atleast one of the two consecutive fluid paths.

In a 13th option, the solid source chemical sublimator of any of options1-12, wherein a porosity of the filter is configured to prevent apassage of the reactant therethrough at a first temperature and to allowa passage of the reactant therethrough at a second temperature.

In a 14th option, the solid source chemical sublimator of option 13,wherein the second temperature is higher than the first temperature.

In a 15th option, the solid source chemical sublimator of any of options11-14, wherein the second temperature is between about 35° C. and 200°C.

In a 16th option, the solid source chemical sublimator of any of options1-15, wherein the filter comprises at least one of a ceramic or a metal.

In a 17th option, the solid source chemical sublimator of any of options1-16, wherein the filter defines an aspect ratio of a height to adiameter of between about 1 and 4.

In a 18th option, the solid source chemical sublimator of any of options1-17, wherein the filter has a height of between about 25 cm and 120 cm.

In a 19th option, the solid source chemical sublimator of any of options1-18, wherein the filter has a diameter of between about 20 cm and 50cm.

In a 20th option, the solid source chemical sublimator of any of options1-19, wherein the flow path comprises a ring.

In a 21st option, the solid source chemical sublimator of any of options1-20, wherein the flow path is configured to be in fluid communicationwith the base.

In a 22nd option, the solid source chemical sublimator of any of options2-21, wherein the filter frame comprises a frame wall and a plurality ofridges formed thereon, the ridges defining at least a portion of theflow path.

In a 23rd option, the solid source chemical sublimator of any of options1-21, wherein a plurality of ridges are formed on an outer surface ofthe filter, the ridges defining at least a portion of the flow path.

In a 24th option, the solid source chemical sublimator of any of options1-23, wherein the housing comprises a fluid inlet and a fluid outlet,the fluid inlet and the fluid outlet each in fluid communication withthe flow path.

In a 25th option, the solid source chemical sublimator of any of options1-24, further comprising one or more heating elements in thermalcommunication with the interior.

In a 26th option, the solid source chemical sublimator of option 25,wherein the one or more heating elements comprise a heating platedisposed in thermal contact with the base.

In a 27th option, the solid source chemical sublimator of any of options23-26, wherein the one or more heating elements is selected from thegroup consisting of a heating rod and a heating plate, or a combinationthereof.

In a 28th option, the solid source chemical sublimator of option 27,wherein the base comprises a receiving portion configured to allow theheating rod to be inserted therein.

In a 29th option, the solid source chemical sublimator of any of options1-28, wherein the interior comprises a headspace that is further influid communication with the flow path, whereby a carrier gas is capableof being saturated by the chemical reactant in the headspace and in theflow path.

In a 30th option, the solid source chemical sublimator of option 29,wherein the headspace remains in fluid communication with the flow pathduring a clogging of the filter.

In a 31st option, the solid source chemical sublimator of any of options1-30, wherein the housing comprises a cylindrical shape.

In a 32nd option, a solid source chemical sublimator comprises: ahousing having an inner space and an inner surface facing the innerspace, the inner space configured to receive chemical reactant therein;a filter frame having first and second ends, the filter frame configuredto support a filter for restraining solid chemical reactant, the filterframe and the filter configured to be disposed within the inner space;and one or more fluid paths defined, at least during a disposition ofthe filter frame within the housing, within an annulus defined betweenthe filter frame and the inner surface of the housing.

In a 33rd option, the solid source chemical sublimator of option 32,further comprising the filter, the filter configured to restrict apassage of a chemical reactant therethrough.

In a 34th option, the solid source chemical sublimator of any of options32-33, further comprising a base configured to receive the chemicalreactant thereon, the filter frame immobilized on the base.

In a 35th option, the solid source chemical sublimator of any of options33-34, wherein the porosity of the filter is configured to restrict thepassage of the chemical reactant from the interior to the fluid path toa rate of transfer that is not substantially greater than a rate ofsublimation of the chemical reactant in the fluid path by a carrier gas.

In a 36th option, the solid source chemical sublimator of any of options32-35, wherein the one or more fluid paths are disposed about anexterior of the filter frame.

In a 37th option, the solid source chemical sublimator of any of options32-36, wherein the one or more fluid paths are disposedcircumferentially about the filter frame, an inner surface of thehousing, or both.

In a 38th option, the solid source chemical sublimator of any of options32-37, wherein the one or more fluid paths are formed at least in partby a recess disposed within the housing.

In a 39th option, the solid source chemical sublimator of any of options32-38, wherein the one or more fluid paths are formed at least in partby a recess disposed within the filter frame.

In a 40th option, the solid source chemical sublimator of any of options32-39, wherein a pitch of at least one of the one or more fluid paths isabout zero.

In a 41st option, the solid source chemical sublimator of any of options32-40, wherein a pitch of at least one of the one or more fluid paths isgreater than zero.

In a 42nd option, the solid source chemical sublimator of any of options32-41, wherein at least one of the one or more fluid paths comprises aspiral.

In a 43rd option, the solid source chemical sublimator of any of options32-42, wherein the one or more fluid paths comprises a plurality offluid paths, and wherein a transverse path connects at least twoconsecutive fluid paths of the plurality of fluid paths.

In a 44th option, the solid source chemical sublimator of option 43,wherein the transverse path is oriented substantially orthogonal to atleast one of the two consecutive fluid paths.

In a 45th option, the solid source chemical sublimator of any of options32-44, wherein a porosity of the filter is configured to prevent apassage of the reactant therethrough at a first temperature and to allowa passage of the reactant therethrough at a second temperature.

In a 46th option, the solid source chemical sublimator of option 45,wherein the second temperature is higher than the first temperature.

In a 47th option, the solid source chemical sublimator of any of options32-46, wherein the second temperature is between about 35° C. and 200°C.

In a 48th option, the solid source chemical sublimator of any of options32-47, wherein the filter comprises at least one of a ceramic or ametal.

In a 49th option, the solid source chemical sublimator of any of options32-48, wherein the filter frame defines an aspect ratio of a height to adiameter of between about 1 and 4.

In a 50th option, the solid source chemical sublimator of any of options32-49, wherein the filter frame has a height of between about 25 cm and120 cm.

In a 51st option, the solid source chemical sublimator of any of options32-50, wherein the filter frame has a diameter of between about 20 cmand 50 cm.

In a 52nd option, the solid source chemical sublimator of any of options32-51, wherein the one or more fluid paths comprise a ring.

In a 53rd option, the solid source chemical sublimator of any of options32-52, wherein the one or more fluid paths are configured to be in fluidcommunication with the base.

In a 54th option, the solid source chemical sublimator of any of options32-53, wherein the filter frame comprises a frame wall and a pluralityof ridges formed thereon, the ridges defining at least a portion of thefluid path.

In a 55th option, the solid source chemical sublimator of any of options32-54, wherein a plurality of ridges are formed on an outer surface ofthe filter frame, the ridges defining at least a portion of the fluidpath.

In a 56th option, the solid source chemical sublimator of any of options32-55, wherein the housing comprises a fluid inlet and a fluid outlet,the fluid inlet and the fluid outlet each in fluid communication withthe one or more fluid paths.

In a 57th option, the solid source chemical sublimator of any of options32-56, further comprising one or more heating elements at least partlydisposed within the interior.

In a 58th option, the solid source chemical sublimator of option 57,wherein the one or more heating elements comprise a heating platedisposed in thermal contact with the base.

In a 59th option, the solid source chemical sublimator of any of options23-58, wherein the one or more heating elements comprise a heating rod.

In a 60th option, the solid source chemical sublimator of option 59,wherein the base comprises a receiving portion configured to allow theheating rod to be inserted therein.

In a 61st option, the solid source chemical sublimator of any of options32-60, wherein the interior comprises a headspace that is further influid communication with the fluid path, whereby a carrier gas iscapable of being saturated by the chemical reactant in the headspace andin the fluid path.

In a 62nd option, the solid source chemical sublimator of option 61,wherein the headspace remains in fluid communication with the fluid pathduring a clogging of the filter.

In a 63rd option, the solid source chemical sublimator of any of options32-62, wherein the housing comprises a cylindrical shape.

In a 64th option, a filter insert comprises: a filter frame having afirst end and a second end, the filter frame at least partially definingan interior; and a filter having a porosity configured to restrict apassage of solid chemical reactant therethrough, the filter frame andthe filter configured to be received within a housing so that the filteris disposed between the interior and one or more channels that define afluid path between the filter frame and an inner surface of the housing.

In a 65th option, the filter insert of option 64, wherein the filterframe comprises a cylindrical shape.

In a 66th option, the filter insert of any of options 64-65, wherein theone or more channels are disposed about an exterior of the filter frame.

In a 67th option, the filter insert of any of options 64-66, wherein theone or more channels are disposed circumferentially about the filterframe.

In a 68th option, the filter insert of any of options 64-67, wherein apitch of at least one of the one or more channels is about zero.

In a 69th option, the filter insert of any of options 64-68, wherein apitch of at least one of the one or more channels is greater than zero.

In a 70th option, the filter insert of any of options 64-69, wherein theone or more channels comprises a plurality of channels, and wherein atransverse channels connects at least two consecutive recesses of theplurality of channels.

In a 71st option, the filter insert of option 70, wherein the transverserecess is oriented substantially orthogonal to at least one of the twoconsecutive channels.

In a 72nd option, the filter insert of any of options 64-71, wherein aporosity of the filter is configured to restrict a passage of thereactant therethrough at a first temperature and to allow a passage ofthe reactant therethrough at a second temperature.

In a 73rd option, the filter insert of option 72, wherein the secondtemperature is higher than the first temperature.

In a 74th option, the filter insert of any of options 38-73, wherein thesecond temperature is between about 35° C. and 200° C.

In a 75th option, the filter insert of any of options 64-74, wherein thefilter comprises at least one of a ceramic or a metal.

In a 76th option, the filter insert of any of options 64-75, wherein thefilter frame defines an aspect ratio of a height to a diameter ofbetween about 1 and 4.

In a 77th option, the filter insert of any of options 64-76, wherein thefilter frame has a height of between about 25 cm and 120 cm.

In a 78th option, the filter insert of any of options 64-77, wherein thefilter frame has a diameter of between about 20 cm and 50 cm.

In a 79th option, the filter insert of any of options 64-78, wherein theone or more channels comprise a ring.

In an 80th option, the filter insert of any of options 64-79, whereinthe one or more fluid pathways are configured to be in fluidcommunication with a base.

In an 81st option, the filter insert of any of options 64-80, whereinthe filter frame comprises a frame wall and a plurality of ridges formedthereon.

In an 82nd option, the filter insert of any of options 64-81, whereinthe filter frame comprises at least one of a fluid inlet and a fluidoutlet in fluid communication with the one or more recesses.

In an 83rd option, the filter insert of any of options 64-82, whereinthe channels comprise recesses and/or ridges.

In an 84th option, the filter insert of any of options 64-83, whereinthe porosity of the filter is configured to restrict the passage of thechemical reactant from the interior to the fluid path to a rate oftransfer that is not substantially greater than a rate of sublimation ofthe chemical reactant by a carrier gas.

In an 85th option, the filter insert of any of options 64-84, whereinthe one or more channels are formed in an interior surface of thehousing.

In an 86th option, the filter insert of any of options 64-85, whereinthe one or more channels are formed in the filter frame.

In an 87th option, a deposition module comprises: a solid sourcechemical sublimator of any of options 1-63; and a vapor phase reactionchamber for depositing a material on a substrate, wherein the solidsource chemical sublimator is configured to supply the vapor phasereaction chamber.

In an 88th option, the deposition module of option 87, furthercomprising control processors and software configured to operate thevapor phase reaction chamber to perform atomic layer deposition (ALD).

In an 89th option, the deposition module of option 87, furthercomprising control processors and software configured to operate thevapor phase reaction chamber to perform chemical vapor deposition (CVD).

In a 90th option, a method for delivering sublimed precursor in adeposition module comprises: connecting a solid source chemicalsublimator to supply a vapor phase reaction chamber, the solid sourcechemical sublimator comprising a housing, a filter, and a flow pathdisposed between the housing and the filter, the flow path in fluidcommunication with a chemical reactant of the solid source chemicalsublimator, said connecting placing the flow path in fluid communicationwith the vapor phase reaction chamber; heating the solid source chemicalsublimator to an operating temperature, wherein the chemical reactant isheated and passes through the filter to the flow path; and flowing acarrier gas along the flow path, wherein sublimed chemical reactantmixes with the carrier gas in the flow path.

In a 91st option, the method of option 90, wherein the solid sourcechemical sublimator comprises a solid source chemical sublimator of anyof options 1-63.

In a 92nd option, the method of any of options 90-91, further comprisingproviding an amount of chemical reactant into the solid source chemicalsublimator.

In a 93rd option, the method of any of options 90-92, wherein theoperating temperature is in a range of between about 50° C. and 250° C.

In a 94th option, the method of any of options 90-93, further comprisingdepositing a material on a substrate in a vapor phase reaction chamber.

In a 95th option, the method of option 94, wherein depositing thematerial comprises atomic layer deposition (ALD).

In a 96th option, the method of any of options 90-95, further comprisingsetting a flow rate of the carrier gas so that a rate of sublimation ofthe chemical reactant by the carrier gas in the fluid path is notsubstantially less than a rate of transfer of the chemical reactant fromthe interior to the fluid path.

In a 97th option, the method of option 96, wherein depositing thematerial comprises chemical vapor deposition (CVD).

In a 98th option, the solid source chemical sublimator, filter insert,deposition module, or method of any of the above options, wherein thechemical reactant is selected from the group consisting of hafniumchloride, hafnium oxide, and zirconium dioxide.

In a 99th option, a solid source chemical sublimator comprises: ahousing comprising a proximal portion and a distal portion, the housinghaving a housing axis extending along a length of the housing, thedistal portion configured to hold solid chemical reactant therein; a liddisposed on the proximal portion of the housing, the lid comprising afluid inlet and a fluid outlet, the lid defining a serpentine flow pathwithin a distal portion of the lid, wherein the lid is adapted to allowgas flow within the flow path, the housing axis being perpendicular to aplane of the lid; and a filter disposed between the serpentine flow pathand the distal portion of the housing, the filter having a porosityconfigured to restrict a passage of a solid chemical reactanttherethrough.

In a 100th option, the solid source chemical sublimator of option 99,wherein the distal portion comprises: a thermally conductive conduitdisposed along the housing axis; and two or more thermally conductiveprotrusions, wherein the conductive protrusions are in thermalcommunication with the conductive conduit and disposed radially aroundthe conductive conduit, whereby the distal portion of the housing isconfigured to hold solid chemical reactant with the conductiveprotrusions positioned therebetween, wherein the conductive conduit isconfigured to be placed in conductive thermal communication with a heatsource.

In a 101st option, the solid source chemical sublimator of option 100,the two or more conductive protrusions comprising at least sixconductive protrusions.

In a 102nd option, the solid source chemical sublimator of any ofoptions 99-101, wherein the housing is cylindrical and the filter iscircular.

In a 103rd option, the solid source chemical sublimator of any ofoptions 99-102, wherein the filter comprises an inlet in fluidcommunication with the fluid inlet of the lid, the inlet of the filterconfigured to allow solid chemical reactant to pass therethrough intothe housing.

In a 104th option, the solid source chemical sublimator of any ofoptions 99-103, wherein a distal-facing portion of the lid contacts aproximal surface of the filter, and wherein the proximal portion of thehousing contacts a distal surface of the filter.

In a 105th option, the solid source chemical sublimator of any ofoptions 99-104, wherein the flow path comprises a plurality of fluidpaths, and wherein a transverse path connects at least two consecutivefluid paths of the plurality of fluid paths.

In a 106th option, the solid source chemical sublimator of option 105,wherein the transverse path is oriented substantially orthogonal to atleast one of the two consecutive fluid paths.

In a 107th option, the solid source chemical sublimator of any ofoptions 99-106, wherein the filter comprises at least one of a ceramicor a metal.

In a 108th option, the solid source chemical sublimator of any ofoptions 99-107, wherein the filter comprises a disk having an aspectratio of a thickness to a diameter of between about 25 and 1000.

In a 109th option, the solid source chemical sublimator of any ofoptions 99-108, wherein the filter has a diameter of between about 20 cmand 50 cm.

In a 110th option, the solid source chemical sublimator of any ofoptions 99-109, wherein the fluid inlet and fluid outlet are each influid communication with the flow path.

In a 111th option, the solid source chemical sublimator of any ofoptions 100-110, wherein the two or more conductive protrusions are inthermal communication with the distal portion of the housing.

In a 112th option, the solid source chemical sublimator of option 111,wherein the one or more heating elements comprise a heating platedisposed in thermal contact with the housing.

In a 113th option, the solid source chemical sublimator of any ofoptions 111-112, wherein the one or more heating elements is selectedfrom the group consisting of a heating rod and a heating plate, or acombination thereof.

In a 114th option, the solid source chemical sublimator of option 113,wherein the housing comprises a receiving portion configured to allowthe heating rod to be inserted therein.

In a 115th option, the solid source chemical sublimator of option 114,wherein the receiving portion is generally longitudinal and configuredto extend axially a majority of an axial length of the housing.

In a 116th option, the solid source chemical sublimator of any ofoptions 99-115, wherein a proximal portion of the housing comprises aheadspace that is further in fluid communication with the flow path,whereby a carrier gas is capable of being saturated by the chemicalreactant in the headspace and in the flow path.

In a 117th option, the solid source chemical sublimator of option 116,wherein the headspace remains in fluid communication with the flow pathwithout traversing the filter, whereby the headspace remains in fluidcommunication with the flow path during a clogging of the filter.

In a 118th option, the solid source chemical sublimator of any ofoptions 99-117, wherein the inlet, the outlet, or both, comprises acorresponding valve configured to allow fluid to flow therethrough.

In a 119th option, the solid source chemical sublimator of any ofoptions 99-118, wherein the inlet, the outlet, or both, comprises acorresponding filter configured to restrict particulate flowtherethrough.

In a 120th option, the solid source chemical sublimator of any ofoptions 99-119, wherein a face of the lid comprises the flow path, andwherein the face is circular.

In a 121th option, the solid source chemical sublimator of any ofoptions 99-120, wherein the sublimator has an aspect ratio of axiallength to diameter of between about 20 and 0.5.

In a 122nd option, the solid source chemical sublimator of any ofoptions 100-121, wherein the two or more conductive protrusions extendfrom the distal portion of the housing.

In a 123rd option, the solid source chemical sublimator of option 122,wherein the two or more conductive protrusions are spaced radially fromthe housing axis.

In a 124th option, the solid source chemical sublimator of any ofoptions 122-123, wherein the two or more conductive protrusions extendaxially from the distal portion of the housing.

In a 125th option, the solid source chemical sublimator of any ofoptions 122-124, wherein the two or more conductive protrusions compriseat least three protrusions radially spaced from each other.

In a 126th option, the solid source chemical sublimator of any ofoptions 99-125 further comprising a resonator disposed in the distalportion of the housing, the resonator comprising extensions disposedradially around the housing axis, the resonator configured to agitatesolid chemical reactant in the housing.

In a 127th option, the solid source chemical sublimator of any ofoptions 99-126, wherein the flow path comprises a plurality ofantiparallel segments within a plane.

In a 128th option, the solid source chemical sublimator of any ofoptions 1-127, wherein the filter is disposed between the fluid outletand the distal portion of the housing.

In a 129th option, the solid source chemical sublimator of any ofoptions 1-128, wherein the filter covers a majority of the flow path.

In a 130th option, a method of sublimating a solid precursor using thesolid source chemical sublimator of any of options 99-129.

Other Considerations

In the foregoing specification, the invention has been described withreference to specific embodiments thereof. It will, however, be evidentthat various modifications and changes may be made thereto withoutdeparting from the broader spirit and scope of the invention. Thespecification and drawings are, accordingly, to be regarded in anillustrative rather than restrictive sense.

Indeed, it will be appreciated that the systems and methods of thedisclosure each have several innovative aspects, no single one of whichis solely responsible or required for the desirable attributes disclosedherein. The various features and processes described above may be usedindependently of one another, or may be combined in various ways. Allpossible combinations and subcombinations are intended to fall withinthe scope of this disclosure.

Certain features that are described in this specification in the contextof separate embodiments also may be implemented in combination in asingle embodiment. Conversely, various features that are described inthe context of a single embodiment also may be implemented in multipleembodiments separately or in any suitable subcombination. Moreover,although features may be described above as acting in certaincombinations and even initially claimed as such, one or more featuresfrom a claimed combination may in some cases be excised from thecombination, and the claimed combination may be directed to asubcombination or variation of a subcombination. No single feature orgroup of features is necessary or indispensable to each and everyembodiment.

It will be appreciated that conditional language used herein, such as,among others, “can,” “could,” “might,” “may,” “e.g.,” and the like,unless specifically stated otherwise, or otherwise understood within thecontext as used, is generally intended to convey that certainembodiments include, while other embodiments do not include, certainfeatures, elements and/or steps. Thus, such conditional language is notgenerally intended to imply that features, elements and/or steps are inany way required for one or more embodiments or that one or moreembodiments necessarily include logic for deciding, with or withoutauthor input or prompting, whether these features, elements and/or stepsare included or are to be performed in any particular embodiment. Theterms “comprising,” “including,” “having,” and the like are synonymousand are used inclusively, in an open-ended fashion, and do not excludeadditional elements, features, acts, operations, and so forth. Also, theterm “or” is used in its inclusive sense (and not in its exclusivesense) so that when used, for example, to connect a list of elements,the term “or” means one, some, or all of the elements in the list. Inaddition, the articles “a,” “an,” and “the” as used in this applicationand the appended claims are to be construed to mean “one or more” or “atleast one” unless specified otherwise. Similarly, while operations maybe depicted in the drawings in a particular order, it is to berecognized that such operations need not be performed in the particularorder shown or in sequential order, or that all illustrated operationsbe performed, to achieve desirable results. Further, the drawings mayschematically depict one more example processes in the form of aflowchart. However, other operations that are not depicted may beincorporated in the example methods and processes that are schematicallyillustrated. For example, one or more additional operations may beperformed before, after, simultaneously, or between any of theillustrated operations. Additionally, the operations may be rearrangedor reordered in other embodiments. In certain circumstances,multitasking and parallel processing may be advantageous. Moreover, theseparation of various system components in the embodiments describedabove should not be understood as requiring such separation in allembodiments, and it should be understood that the described componentsand systems may generally be integrated together in a single product orpackaged into multiple products (for example, a filter insert and asource vessel comprising a housing and base). Additionally, otherembodiments are within the scope of the following claims. In some cases,the actions recited in the claims may be performed in a different orderand still achieve desirable results.

Accordingly, the claims are not intended to be limited to theembodiments shown herein, but are to be accorded the widest scopeconsistent with this disclosure, the principles and the featuresdisclosed herein. For example, although many examples within thisdisclosure are provided with respect to supplying vapor from solidsources for feeding deposition chambers for semiconductor fabrication,certain embodiments described herein may be implemented for a widevariety of other applications and/or in numerous other contexts.

What is claimed is:
 1. A solid source chemical sublimator, comprising: ahousing comprising a proximal portion and a distal portion, the housinghaving a housing axis extending along a length of the housing, thedistal portion configured to hold solid chemical reactant therein; a liddisposed on the proximal portion of the housing, the lid comprising afluid inlet and a fluid outlet, the housing axis being perpendicular toa plane of the lid; a thermally conductive conduit disposed along thehousing axis; two or more thermally conductive protrusions extendingradially from the conductive conduit, wherein the conductive protrusionsare connected to the conductive conduit and wherein the distal portionof the housing is configured to hold the solid chemical reactant withthe conductive protrusions positioned therein; and a flow structureconfigured to increase a length of time of carrier gas exposure tosublimed reactant, the flow structure disposed within a proximalinterior portion of the housing and comprising a plurality ofprotrusions axially spaced from one another, the plurality ofprotrusions forming one or more fluid paths between the fluid inlet tothe fluid outlet.
 2. The solid source chemical sublimator of claim 1,wherein at least two of the two or more thermally conductive protrusionsare spaced radially from the housing axis.
 3. The solid source chemicalsublimator of claim 1, wherein the two or more conductive protrusionscomprises at least six conductive protrusions.
 4. The solid sourcechemical sublimator of claim 1, wherein the conductive conduit isconfigured to be connected to a heat source.
 5. The solid sourcechemical sublimator of claim 1, further comprising a filter disposedbelow a distal face of the lid and above the proximal portion of thehousing, the filter having a porosity configured to restrict a passageof the solid chemical reactant therethrough.
 6. The solid sourcechemical sublimator of claim 5, wherein the distal face of the lidcontacts a proximal surface of the filter, and wherein the proximalportion of the housing contacts a distal surface of the filter.
 7. Thesolid source chemical sublimator of claim 5, wherein the flow structurecomprises a filter frame configured to support the filter.
 8. The solidsource chemical sublimator of claim 1, wherein the flow structurecomprises a serpentine path configured to promote saturation of thecarrier gas with the sublimed reactant.
 9. A solid source chemicalsublimator, comprising: a housing defining a housing axis extendingalong a length of the housing, the housing configured to hold solidchemical reactant therein; a base disposed at a distal end of thehousing; a lid disposed at a proximal end of the housing, the housingaxis being perpendicular to a face of the lid and to a face of the base;a thermally conductive conduit extending from the base along the housingaxis; a plurality of thermally conductive protrusions extending from thethermally conductive conduit, each of the plurality of thermallyconductive protrusions configured to heat the solid chemical reactant;and a filter disposed at least partially between the lid and thehousing, the filter having a porosity configured to restrict a passageof the solid chemical reactant therethrough.
 10. The solid sourcechemical sublimator of claim 9, wherein at least one of the plurality ofthermally conductive protrusions is connected to the base.
 11. The solidsource chemical sublimator of claim 9, wherein at least one of theplurality of thermally conductive protrusions extends from the base. 12.The solid source chemical sublimator of claim 11, wherein the at leastone thermally conductive protrusion extends axially from the base. 13.The solid source chemical sublimator of claim 9, wherein at least two ofthe plurality of thermally conductive protrusions are spaced radially inrelation to the housing axis.
 14. The solid source chemical sublimatorof claim 13, wherein the at least two of the plurality of thermallyconductive protrusions extend orthogonal to the housing axis.
 15. Asolid source vessel comprising: a housing configured to hold solidchemical reactant within an interior volume of the housing; a flowstructure disposed within a proximal portion of the interior volume ofthe housing, the flow structure configured to promote saturation of acarrier gas with sublimed reactant; a refill aperture configured toallow delivery of the solid chemical reactant into the interior volumeof the housing; and a plurality of thermally conductive protrusionsextending within the interior volume of the housing, each of theplurality of thermally conductive protrusions configured to heat thesolid chemical reactant.
 16. The solid source vessel of claim 15,wherein the plurality of thermally conductive protrusions comprises avertical protrusion and a radial protrusion extending radially outwardfrom the vertical protrusion.
 17. The solid source vessel of claim 16,wherein the radial protrusion is cantilevered from the verticalprotrusion such that the radial protrusion does not contact the housing.18. The solid source vessel of claim 16, further comprising a heatingelement disposed within the vertical protrusion.
 19. The solid sourcevessel of claim 15, wherein each of the plurality of thermallyconductive protrusions have an elongate shape.
 20. The solid sourcevessel of claim 15, wherein each set of adjacent of the plurality ofthermally conductive protrusions are spaced radially equally from eachother set.